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| (R) ACST4 Series AC POWER SWITCH ASDTM AC Switch Family MAIN APPLICATIONS AC static switching in appliance control systems Drive of low power high inductive or resistive loads like - spray pump in dishwashers - fan in air-conditioners s s OUT G COM FEATURES s s DPAK ACST4-7SB/CB s s s s s Blocking voltage : VDRM / VRRM = +/-700V Avalanche controlled : VCL typ = 1100 V Nominal conducting current : IT(RMS) = 4A High surge current capability: 30A for 20ms full wave Gate triggering current : IGT < 10 mA or 25mA Switch integrated driver High noise immunity : static dV/dt >500V/s G OUT COM BENEFITS Enables equipment to meet IEC 61000-4-5 High off-state reliability with planar technology No external overvoltage protection needed Reduces the power component factor Interfaces directly with the microcontroller Direct interface with the microcontroller for the ACST4-7S (IGT < 10mA) s s s s s s TO-220FPAB ACST4-7SFP/CFP FUNCTIONAL DIAGRAM OUT DESCRIPTION The ACST4 belongs to the AC power switch family built around the ASDTM technology. This high performance device is adapted to home appliances or inductrial systems and drives loads up to 4 A. The ACSTM switch embeds a Triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC61000-4-5 standards. COM G January 2003 - Ed: 3A 1/9 ACST4 Series ABSOLUTE RATINGS (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage Symbol VDRM / VRRM IT(RMS) ITSM I2t dI/dt VPP Tstg Tj Tl Parameter Repetitive peak off-state voltage RMS on-state current full cycle sine wave 50 to 60 Hz DPAK TO-220FPAB Tj = -10 C Tc = 110 C Tc = 100 C F =50 Hz F =60 Hz tp = 10ms Tj = 125C F = 120 Hz note 1 Value 700 4 30 33 6.4 50 2 - 40 to + 150 - 30 to + 125 260 Unit V A A A As A/s kV C C C Non repetitive surge peak on-state current Tj initial = 25C, full cycle sine wave Fusing capability Repetitive on-state current critical rate of rise IG = 10mA (tr < 100ns) Non repetitive line peak pulse voltage Storage temperature range Operating junction temperature range Maximum lead soldering temperature during 10s Note 1: according to test described by IEC61000-4-5 standard & Figure B. GATE CHARACTERISTICS (maximum values) Symbol PG (AV) PGM IGM Parameter Average gate power dissipation Peak gate power dissipation (tp = 20s) Peak gate current (tp = 20s) Value 0.1 10 1 Unit W A V THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Junction to ambient Junction to case for full cycle sine wave conduction Parameter S = 0.5cm DPAK TO-220FPAB DPAK TO-220FPAB Value 70 60 2.6 4.6 Unit C/W C/W C/W C/W S = Copper surface under Tab 2/9 ACST4 Series PARAMETER DESCRIPTION Parameter Symbol IGT VGT VGD IH IL VTM VTO Rd IDRM / IRRM dV/dt (dV/dt)c (dI/dt)c VCL ICL Triggering gate current Triggering gate voltage Non-triggering gate voltage Holding current Latching current Peak on-state voltage drop On state threshold voltage On state dynamic resistance Maximum forward or reverse leakage current Critical rate of rise of off-state voltage Critical rate of rise of commutating off-state voltage Critical rate of decrease of commutating on-state current Clamping voltage Clamping current Parameter description ELECTRICAL CHARACTERISTICS For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage. Symbol IGT VGT VGD IH IL VTM VTO Rd IDRM / IRRM dV/dt (dI/dt)c VCL VOUT = 700V VOUT=12V (DC) RL=33 VOUT=12V (DC) RL=33 Test Conditions QI - QII - QIII QI - QII - QIII Tj=25C Tj=25C Tj=125C Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C Tj=25C Tj=125C VOUT=460V gate open (dV/dt)c = 15V/s ICL = 1mA tp=1ms Tj=110C Tj=125C Tj=25C MAX MAX MIN MAX MAX MAX MAX MAX MAX MAX MIN MIN TYP ACST4-7S 10 1 0.2 20 40 1.5 ACST4-7C 25 1.1 Unit mA V V VOUT=VDRM RL=3.3k IOUT= 100mA gate open IG= 2 x IGtmax IOUT = 5.6A tp=380s 35 60 mA mA V V m A 0.90 100 10 500 200 2.0 1100 500 2.5 V/s A/ms V 3/9 ACST4 Series AC LINE SWITCH BASIC APPLICATION The ACST4 device has been designed to switch on & off low power, but highly inductive or resistive loads such as dishwashers spray pumps, and air-conditioners fan. Pin COM: Common drive reference to connect to the power line neutral Pin G: Switch Gate input to connect to the digital controller Pin OUT: Switch Output to connect to the load ACST4-7S triggering current has to be sunk from the gate pin G. The switch can then be driven directly by logic level circuits through a resistor as shown on the typical application diagram ( Fig A ). Thanks to its thermal and turn off commutation performances, the ACST4 switch is able to drive with no turn off additional snubber an inductive load up to 4 A. TYPICAL APPLICATION DIAGRAM (Fig. A) L LOAD L AC MAINS M R N OUT OUT ACST4 COM G ST72 MCU - Vcc AC LINE TRANSIENT VOLTAGE RUGGEDNESS The ACST4 switch is able to sustain safely the AC line transient voltages either by clamping the low energy spikes or by breaking over under high energy shocks, even with high turn-on current rises. The test circuit of the figure 2 is representative of the final ACST application and is also used to stress the ACST switch according to the IEC 61000-4-5 standard conditions. Thanks to the load, the ACST switch sustains the voltage spikes up to 2 kV above the peak line voltage. It will break over safely even on resistive load where the turn on current rate of rise, is as high as shown on figure 3. Such non-repetitive test can be done 10 times on each AC line voltage polarity. 4/9 ACST4 Series Fig. B: Overvoltage ruggedness test circuit for resistive and inductive loads according to IEC61000-4-5 standards. R = 150, L = 10H, VPP = 2kV. Fig. C: Current and Voltage of the ACST4 during IEC61000-4-5 standard test with R, L & VPP . R L OUT ACST4 SURGE VOLTAGE AC LINE & GENERATOR VAC + VPP COM G RG = 220 Fig. 1: Maximum power dissipation versus RMS on-state current. P(W) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 =180 Fig. 2-1: RMS on-state current versus case temperature. IT(RMS)(A) 4.5 DPAK 4.0 3.5 TO-220FPAB 3.0 2.5 2.0 1.5 1.5 180 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IT(RMS)(A) 3.5 1.0 0.5 0.0 4.0 =180 Tc(C) 25 50 75 100 125 0 5/9 ACST4 Series Fig. 2-2: RMS on-state current versus ambient temperature. IT(RMS)(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 DPAK Zth(j-a) =180 Printed circuit board FR4 Natural convection S=0.5cm Fig. 3: Relative variation of thermal impedance versus pulse duration. K = [Zth/Rth] 1.00 DPAK Zth(j-c) TO-220FPAB 0.10 TO-220FPAB Tamb(C) 0.01 1.E-02 1.E-01 1.E+00 tp(s) 1.E+01 1.E+02 1.E+03 Fig. 4: Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values). IGT, IH, IL [Tj] / IGT, IH, IL [Tj = 25C] 3.0 2.5 IGT Fig. 5: Relative variation of static dV/dt versus junction temperature. dV/dt [Tj] / dV/dt [Tj = 125C] 8 Vout=460V 7 6 5 4 3 2.0 1.5 1.0 0.5 IL & I H 2 1 0 Tj(C) 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tj(C) 25 50 75 100 125 Fig. 6-1: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 1.2 Vout=300V Fig. 6-2: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 1.2 Vout=300V 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 1.0 0.8 0.6 0.4 0.2 ACST4-7C ACST4-7S (dV/dt)c(V/s) 0.0 0 5 10 15 (dV/dt)c(V/s) 20 25 30 35 40 45 50 6/9 ACST4 Series Fig. 7: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj = 125C] 6 Vout=300V Fig. 8: Surge peak on-state current versus number of cycles. ITSM(A) 35 30 25 20 Non repetitive Tj initial=25C t=20ms 5 4 3 15 2 10 5 Repetitive TC=100C 1 Tj(C) 0 25 50 75 100 125 Number of cycles 0 1 10 100 1000 Fig. 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It. ITSM(A), It (As) 1000 dI/dt limitation: 50A/s Tj initial=25C Fig. 10: values). ITM(A) 100.00 Tj max. : Vto= 0.90 V Rd= 100 m On-state characteristics (maximum 100 10.00 ITSM Tj=125C 10 It 1.00 Tj=25C tp(ms) 1 0.01 0.10 1.00 10.00 0.10 0.0 0.5 1.0 1.5 2.0 VTM(V) 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35m) Rth(j-a)(C/W) 100 DPAK 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 S(cm) 7/9 ACST4 Series ORDERING INFORMATION ACST AC Switch IT(RMS) 4 = 4A 4 - 7 X X Package B = DPAK FP = TO-220FPAB VDRM 7 = 700V Gate Sensitivity S= 10mA C = 25mA PACKAGE OUTLINE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0 Millimeters Min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.60 Inches Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.023 0 Max 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1.00 8 Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8 0.80 typ. 0.031 typ. FOOT PRINT DPAK 6.7 6.7 3 3 1.6 2.3 2.3 1.6 8/9 ACST4 Series PACKAGE OUTLINE MECHANICAL DATA TO-220FPAB DIMENSIONS REF. A H B Millimeters Min. Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 16 Typ. 28.6 9.8 2.9 15.9 9.00 30.6 10.6 3.6 16.4 9.30 Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 1.126 0.386 0.114 0.626 0.354 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.142 0.646 0.366 A B D 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 Dia L6 L2 L3 L7 E F F1 F2 G L5 D F1 L4 F2 G1 H L2 L3 L4 L5 L6 L7 0.63 Typ. F G1 G E OTHER INFORMATION Ordering type ACST4-7SB ACST4-7SB-TR ACST4-7SFP ACST4-7CB ACST4-7CB-TR ACST4-7CFP s Marking ACST47S ACST47S ACST47S ACST47C ACST47C ACST47C Package DPAK DPAK TO-220FPAB DPAK DPAK TO-220FPAB Weight 0.3 g 0.3 g 2.4 g 0.3 g 0.3 g 2.4 g Base qty 75 2500 50 75 2500 50 Delivery mode Tube Tape & reel Tube Tube Tape & reel Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9 This datasheet has been download from: www..com Datasheets for electronics components. |
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